IndiumV3, Chine, Analysis, bibRecord, 001116

Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents

Identifieur interne : 001116 ( Chine/Analysis ); précédent : 001115; suivant : 001117

Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents

Auteurs : RBID : Pascal:08-0401955

Descripteurs français

Pascal (Inist)
- Méthode IBAD, Structure état amorphe, Orientation préférentielle, Rugosité, Propriété optique, Coefficient absorption, Constante optique, Effet Hall, Conductivité électrique, Spectre IR, Spectre transformée Fourier, Facteur réflexion, Oxyde d'indium, Oxyde d'étain, Couche mince.

English descriptors

KwdEn :
- Absorption coefficients, Amorphous state structure, Electrical conductivity, Fourier transform spectra, Hall effect, Indium oxide, Infrared spectra, Ion beam assisted deposition method, Optical constants, Optical properties, Preferred orientation, Reflectivity, Roughness, Thin films, Tin oxide.

Abstract

Indium tin oxide (ITO) films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique (IBAD) at different ion beam currents (80-120 mA). The effect of the ion beam current on films properties has been studied. The films prepared at low ion beam current (80 mA) show an almost amorphous structure. As the ion beam current is increased, films show a preferred orientation along the (222) direction. AFM measurements show that the surface RMS roughness of the film increases as the current goes up. The optical properties have been studied by measuring the transmittance. It has been found that the film prepared at 100 mA current has the highest transmittance. The optical constants of the films have been calculated by fitting the transmittance. The Hall measurements also showed that the film prepared at 100 mA current has one of the lower electrical resistivities. FTIR measurements show that the film prepared at 100 mA current has the highest infra-red reflectance. All the measurements show the 100 mA ion beam current can produce good quality ITO films.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 006537
to stream Main, to step Repository: 006481
to stream Chine, to step Extraction: 001116

Links to Exploration step

Pascal:08-0401955

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents</title>
<author><name>LIJIAN MENG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Instituto Superior de Engenharia do Porto, Rua Dr. António Bernardino de Almeida, 431</s1>
<s2>4200-072 Porto</s2>
<s3>PRT</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Portugal</country>
<wicri:noRegion>4200-072 Porto</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centro de Física, Universidade do Minho</s1>
<s2>4700 Braga</s2>
<s3>PRT</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Portugal</country>
<wicri:noRegion>4700 Braga</wicri:noRegion>
</affiliation>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Center of Optical Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
</author>
<author><name>JINSONG GAO</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Center of Optical Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Teixeira, V" uniqKey="Teixeira V">V. Teixeira</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centro de Física, Universidade do Minho</s1>
<s2>4700 Braga</s2>
<s3>PRT</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Portugal</country>
<wicri:noRegion>4700 Braga</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Dos Santos, M P" uniqKey="Dos Santos M">M. P. Dos Santos</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>CeFITec, Universidade Nova de Lisboa/Departamento de Física, Universidade de Évora</s1>
<s3>PRT</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Portugal</country>
<wicri:noRegion>CeFITec, Universidade Nova de Lisboa/Departamento de Física, Universidade de Évora</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">08-0401955</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0401955 INIST</idno>
<idno type="RBID">Pascal:08-0401955</idno>
<idno type="wicri:Area/Main/Corpus">006537</idno>
<idno type="wicri:Area/Main/Repository">006481</idno>
<idno type="wicri:Area/Chine/Extraction">001116</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1862-6300</idno>
<title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title>
<title level="j" type="main">Physica status solidi. A, Applications and materials science : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term>
<term>Amorphous state structure</term>
<term>Electrical conductivity</term>
<term>Fourier transform spectra</term>
<term>Hall effect</term>
<term>Indium oxide</term>
<term>Infrared spectra</term>
<term>Ion beam assisted deposition method</term>
<term>Optical constants</term>
<term>Optical properties</term>
<term>Preferred orientation</term>
<term>Reflectivity</term>
<term>Roughness</term>
<term>Thin films</term>
<term>Tin oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Méthode IBAD</term>
<term>Structure état amorphe</term>
<term>Orientation préférentielle</term>
<term>Rugosité</term>
<term>Propriété optique</term>
<term>Coefficient absorption</term>
<term>Constante optique</term>
<term>Effet Hall</term>
<term>Conductivité électrique</term>
<term>Spectre IR</term>
<term>Spectre transformée Fourier</term>
<term>Facteur réflexion</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Couche mince</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Indium tin oxide (ITO) films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique (IBAD) at different ion beam currents (80-120 mA). The effect of the ion beam current on films properties has been studied. The films prepared at low ion beam current (80 mA) show an almost amorphous structure. As the ion beam current is increased, films show a preferred orientation along the (222) direction. AFM measurements show that the surface RMS roughness of the film increases as the current goes up. The optical properties have been studied by measuring the transmittance. It has been found that the film prepared at 100 mA current has the highest transmittance. The optical constants of the films have been calculated by fitting the transmittance. The Hall measurements also showed that the film prepared at 100 mA current has one of the lower electrical resistivities. FTIR measurements show that the film prepared at 100 mA current has the highest infra-red reflectance. All the measurements show the 100 mA ion beam current can produce good quality ITO films.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1862-6300</s0>
</fA01>
<fA03 i2="1"><s0>Phys. status solidi, A Appl. mater. sci. : (Print)</s0>
</fA03>
<fA05><s2>205</s2>
</fA05>
<fA06><s2>8</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>LIJIAN MENG</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>JINSONG GAO</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>TEIXEIRA (V.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>DOS SANTOS (M. P.)</s1>
</fA11>
<fA14 i1="01"><s1>Departamento de Física, Instituto Superior de Engenharia do Porto, Rua Dr. António Bernardino de Almeida, 431</s1>
<s2>4200-072 Porto</s2>
<s3>PRT</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Centro de Física, Universidade do Minho</s1>
<s2>4700 Braga</s2>
<s3>PRT</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Center of Optical Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences</s1>
<s2>Changchun</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>CeFITec, Universidade Nova de Lisboa/Departamento de Física, Universidade de Évora</s1>
<s3>PRT</s3>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>1961-1966</s1>
</fA20>
<fA21><s1>2008</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10183A</s2>
<s5>354000196300530460</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2008 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>24 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>08-0401955</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physica status solidi. A, Applications and materials science : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Indium tin oxide (ITO) films have been deposited onto glass substrates at room temperature by ion beam assisted deposition technique (IBAD) at different ion beam currents (80-120 mA). The effect of the ion beam current on films properties has been studied. The films prepared at low ion beam current (80 mA) show an almost amorphous structure. As the ion beam current is increased, films show a preferred orientation along the (222) direction. AFM measurements show that the surface RMS roughness of the film increases as the current goes up. The optical properties have been studied by measuring the transmittance. It has been found that the film prepared at 100 mA current has the highest transmittance. The optical constants of the films have been calculated by fitting the transmittance. The Hall measurements also showed that the film prepared at 100 mA current has one of the lower electrical resistivities. FTIR measurements show that the film prepared at 100 mA current has the highest infra-red reflectance. All the measurements show the 100 mA ion beam current can produce good quality ITO films.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C61L</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H66L</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Méthode IBAD</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Ion beam assisted deposition method</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Structure état amorphe</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Amorphous state structure</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Estructura estado amorfo</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Orientation préférentielle</s0>
<s5>05</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Preferred orientation</s0>
<s5>05</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Orientación preferencial</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Rugosité</s0>
<s5>06</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Roughness</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Coefficient absorption</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Absorption coefficients</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Constante optique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Optical constants</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Effet Hall</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Hall effect</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Spectre IR</s0>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Infrared spectra</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Spectre transformée Fourier</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Fourier transform spectra</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Facteur réflexion</s0>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Reflectivity</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Oxyde d'étain</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Estaño óxido</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Thin films</s0>
<s5>17</s5>
</fC03>
<fN21><s1>259</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001116 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd -nk 001116 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:08-0401955
   |texte=   Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents

Indium tin oxide thin films prepared by ion beam assisted deposition technique at different ion beam currents

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri